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DT70V TD3HJ13A BO8032 RTC64613 BZQ5231B 9619A N455000S 61089A
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  1.base 2.collector 3.emitter unit:mm s o t - 8 9 4.500.1 1.800.1 2 . 5 0 0 . 1 4 . 0 0 0 . 1 0.480.1 0.530.1 0 . 8 0 0 . 1 1.50 0.1 0.440.1 3.000.1 0 . 4 0 0 . 1 2 . 6 0 0 . 1 1 2 3 features p np t ransist or high curren t output up to 3a low sat uration voltage complem ent to 2sd882 absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector to b ase volt age v cbo -40 v collector to e m itt er voltage v ceo -30 v em itt er to bas e voltage v ebo -6 v collector curr ent to continuo us i c -3 a collector diss ipation p c 0.5 w junct ion tem pera ture t j 150 st orag e tem pera ture t stg -55 to 150 ele ctric al characteristics t a = 2 5 paramet er sym bol test conditons min typ ma x unit collector-ba se breakdow n voltage v cbo i c =-10 0ua ,i e =0 -40 v collector-emit ter breakdow n voltage v ceo i c = -10 m a , i b =0 -30 v em itt er- base brea kdow n voltage v ebo i e = -100 ua ,i c =0 -6 v collector cut-off c urr ent i cbo v cb =-40 v , i e =0 -1 a em itt er cut-off current i ebo v eb =-6v , i c =0 -1 a v ce = -2v, i c = -1a 60 400 v ce =-2v, i c = -100ma 32 collector-emit ter sat uration v oltage v ce(sat) i c =-2a, i b =- 0.2a -0.5 v base-em itt er saturation voltage v be(sat) i c =-2a, i b = -0.2a -1.5 v transition frequency f t v ce =-5 v, i c =-0.1ma ,f = 10m hz 50 mh z dc curre nt gain h fe h fe class ification rank r q p e h 60 120 100 200 160 320 200 400 fe 2s b7 72 smd type smd type product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
typical characteristics 2s b7 72 smd type smd type product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
2s b7 72 smd type smd type product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123


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